Phase change random access memory (PRAM) device

Details Phase change random access memory (PRAM) device Phase change random access memory (PRAM) device

2007-06-05

2007-06-05

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S051000, C365S063000

Reexamination Certificate

active

11315130

ABSTRACT:
A phase change memory device includes a phase change memory cell block having alternating odd-numbered and even-numbered local bit lines, a global bit line, a plurality of first bit line selection circuits, and a plurality of second bit line selection circuits. The plurality of first bit line selection circuits are located at a first side of the phase change memory cell block and selectively connect respective odd-numbered local bit lines to the global bit line. The plurality of second bit line selection circuits are located at second side of the phase change memory cell block (opposite the first side) and selectively connect respective even-numbered local bit lines to the global bit line.

REFERENCES:
patent: 6735104 (2004-05-01), Scheuerlein
patent: 6778421 (2004-08-01), Tran
patent: 6937505 (2005-08-01), Morikawa
patent: 7027342 (2006-04-01), Inoue
patent: 2006/0120148 (2006-06-01), Kim et al.
patent: 2006/0291277 (2006-12-01), Cho et al.

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