Phase-change random access memory device, system having the...

Details Phase-change random access memory device, system having the... Phase-change random access memory device, system having the...

2011-02-15

2011-02-15

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S230060, C365S204000, C365S185250

Reexamination Certificate

active

07889546

ABSTRACT:
A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.

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