Phase change random access memory device and related methods...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07961504

ABSTRACT:
A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.

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patent: 7471553 (2008-12-01), Lee et al.
patent: 2004/0228163 (2004-11-01), Khouri et al.
patent: 20010052795 (2001-06-01), None
patent: 1020040104969 (2004-12-01), None
patent: 1020050120485 (2005-12-01), None
patent: 0062301 (2000-10-01), None

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