Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-06-14
2011-06-14
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07961504
ABSTRACT:
A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
REFERENCES:
patent: 6201739 (2001-03-01), Brown et al.
patent: 7349245 (2008-03-01), Kim et al.
patent: 7457151 (2008-11-01), Cho et al.
patent: 7471553 (2008-12-01), Lee et al.
patent: 2004/0228163 (2004-11-01), Khouri et al.
patent: 20010052795 (2001-06-01), None
patent: 1020040104969 (2004-12-01), None
patent: 1020050120485 (2005-12-01), None
patent: 0062301 (2000-10-01), None
Kim Du-Eung
Kim Hye-jin
Lee Kwang-Jin
Dinh Son
Nguyen Nam T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Phase change random access memory device and related methods... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase change random access memory device and related methods..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change random access memory device and related methods... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2743286