Phase-change random access memory and programming method

Details Phase-change random access memory and programming method Phase-change random access memory and programming method

2007-01-25

2009-12-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S100000, C365S189011

Reexamination Certificate

active

07626859

ABSTRACT:
A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and/or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.

REFERENCES:
patent: 2005/0141261 (2005-06-01), Ahn
patent: 2006/0157682 (2006-07-01), Scheuerlein

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