Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-09-10
2009-08-11
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S148000
Reexamination Certificate
active
07573766
ABSTRACT:
Provided is a method of testing a phase change random access memory (PRAM). The method may include providing a plurality of PRAM cells each coupled between each of a plurality of first lines and each of a plurality of second lines intersecting the first lines, selecting at least one of the plurality of first lines while deselecting the remaining first lines and the plurality of second lines, pre-charging the selected at least one of the plurality of first lines to a predetermined or given voltage level, and sensing a change in the voltage level of the selected first line while supplying a monitoring voltage to the selected first line.
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Notice of Allowance dated Sep. 9, 2008 in corresponding Korean Application No. 10-2006-0087632.
Office Action dated Mar. 10, 2008, in corresponding Korean Patent Application No. 10-2006-0087632.
Cho Beak-hyung
Choi Byung-gil
Choi Chang-han
Kim Du-eung
Ro Yu-hwan
Harness & Dickey & Pierce P.L.C.
Le Vu A
Samsung Electronics Co,. Ltd.
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