Phase change random access memory

Details Phase change random access memory Phase change random access memory

2009-05-11

2010-10-19

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S211000, C365S222000

Reexamination Certificate

active

07817465

ABSTRACT:
A phase change random access (PRAM) memory may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensate for a decrease in a level of the sensing node caused by a current flowing through one of the plurality of phase change memory cells, and the sense amplifier configured to compare a level of the sensing node with a reference level and output a result of the comparison.

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