Phase-change random access memories capable of suppressing...

Details Phase-change random access memories capable of suppressing... Phase-change random access memories capable of suppressing...

2011-04-19

2011-04-19

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S051000, C365S063000, C365S189040

Reexamination Certificate

active

07929337

ABSTRACT:
A semiconductor memory device includes at least one write global bit line connected to a plurality of local bit lines and at least one read global bit line connected to the local bit lines. The phase-change memory device having the write global bit line and the read global bit line suppress coupling noise generated during a read-while-write operation.

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