Phase-change RAM and method for fabricating the same

Details Phase-change RAM and method for fabricating the same Phase-change RAM and method for fabricating the same

2005-11-23

2009-06-02

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S306000, C257S311000, C257SE27084, C257SE29343

Reexamination Certificate

active

07541633

ABSTRACT:
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

REFERENCES:
patent: 7214958 (2007-05-01), Happ
patent: 7323708 (2008-01-01), Lee et al.
patent: 2005/0019975 (2005-01-01), Lee et al.
patent: 1536688 (2004-10-01), None
Office Action from corresponding Chinese Application No. 200510126836.7, mailed on Aug. 22, 2008.

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