Phase change memory with finite annular conductive path

Details Phase change memory with finite annular conductive path Phase change memory with finite annular conductive path

2011-06-21

2011-06-21

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07965537

ABSTRACT:
A phase change memory device and a method for programming the same. The method includes determining a maximum possible resistance for the memory cells in the phase change memory device. The method includes determining a high resistance state for the memory cells in the phase change memory device. The method includes receiving a request to program a target memory cell in the phase change memory device to the high resistance state. The method also includes resetting the target memory cell in the phase change memory device to the high resistance state such that the high resistance state of the target memory cell is of less resistance than the maximum possible resistance. In one embodiment of the invention, the high resistance state for the memory cells in the phase change memory device is at least 10% less than the maximum possible resistance.

REFERENCES:
patent: 2009/0166601 (2009-07-01), Czubatyj et al.
patent: 2009/0279349 (2009-11-01), Shih et al.
patent: 2010/0110780 (2010-05-01), Wicker
patent: 2010/0163826 (2010-07-01), Peters

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