Phase change memory programming method without reset over-write

Details Phase change memory programming method without reset over-write Phase change memory programming method without reset over-write

2011-01-04

2011-01-04

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189160

Reexamination Certificate

active

07864566

ABSTRACT:
A method for programming a phase change memory device that avoids RESET overwrite. The method partially comprised of applying a reset write current pulse through the phase change memory element such that the reset write current pulse produces a voltage drop across the phase change memory element less than a reset threshold voltage and greater than a set threshold voltage. The reset write current pulse writing a RESET state to the phase change memory cell. The method additionally comprised of applying a set write current pulse through the phase change memory element such that the set write current pulse produces a voltage drop across the phase change memory element that is equal to or greater than the reset threshold voltage. The set write current pulse writing a SET state to the phase change memory cell.

REFERENCES:
patent: 2007/0253242 (2007-11-01), Parkinson et al.

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