Phase-change memory element driver circuits using...

Details Phase-change memory element driver circuits using... Phase-change memory element driver circuits using...

2007-03-13

2007-03-13

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000

Reexamination Certificate

active

11092456

ABSTRACT:
Programming phase-change memory devices and driver circuits for programming phase-change memory devices are provided that control an amount of current supplied to a phase-change material of the phase-change memory device based on a measure of resistance of the phase-change material during programming of the phase-change memory device. Such control may be based on detected voltage or current. The amount of current supplied to the phase-change material may be increased until the measured voltage level changes with respect to a reference voltage value and the current maintained constant if the measured voltage level has changed with respect to the reference voltage value. The change of the measured voltage level with respect to the reference voltage may be the measured voltage level falling below the reference voltage value.

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European Search for European patent application No. 05 01 2604 completed on Oct. 6, 2005.
Preliminary Notice of First Official Action for Taiwanese Application No. 094118699; dated Oct. 11, 2006.
English translation of Preliminary Notice of First Official Action for Taiwanese Application No. 094118699; dated Oct. 11, 2006.

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