Phase change memory devices and read methods using elapsed...

Details Phase change memory devices and read methods using elapsed... Phase change memory devices and read methods using elapsed...

2011-06-28

2011-06-28

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S163000, C365S185250, C365S185180, C365S189150

Reexamination Certificate

active

07969798

ABSTRACT:
A variable resistance memory device includes a memory cell connected to a bit line and a clamp circuit configured to provide either a first read voltage or a second read voltage to the bit line according to an elapsed time from a write operation of the memory cell. Related methods are also described.

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