Phase change memory devices and fabrication methods thereof

Details Phase change memory devices and fabrication methods thereof Phase change memory devices and fabrication methods thereof

2006-02-17

2009-10-06

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C257S002000, C438S095000

Reexamination Certificate

active

07599216

ABSTRACT:
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

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Korean Office Action, dated Sep. 22, 2006, in connection with counterpart Korean Patent Application No. 10-2005-0013531.
Office Action dated Aug. 22, 2008 for counterpart Chinese Application No. 2006100049634.

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