Phase change memory devices and fabrication methods thereof

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C977S754000

Reexamination Certificate

active

07872908

ABSTRACT:
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

REFERENCES:
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6586761 (2003-07-01), Lowrey
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 6908812 (2005-06-01), Lowrey
patent: 7161167 (2007-01-01), Johnson
patent: 2003/0201469 (2003-10-01), Lowrey
patent: 2004/0113137 (2004-06-01), Lowrey
patent: 2004/0183107 (2004-09-01), Horii et al.
patent: 2005/0029503 (2005-02-01), Johnson
patent: 1554125 (2004-12-01), None
Korean Office Action, dated Sep. 22, 2006, in connection with counterpart Korean Patent Application No. 10-2005-0013531.
Office Action dated Aug. 22, 2008 for counterpart Chinese Application No. 2006100049634.

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