Phase change memory device with plated phase change material

Details Phase change memory device with plated phase change material Phase change memory device with plated phase change material

2009-08-14

2011-10-04

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

Direct application of electrical current

C257SE21645

Reexamination Certificate

active

08030130

ABSTRACT:
A method for fabricating a phase change memory device including memory cells includes patterning a via to a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, lining each via with a conformal conductive seed layer to the contact surface, forming a dielectric layer covering the conductive seed layer, and etching a center region of each via to the contact surface to expose the conformal conductive seed layer at the contact surface. The method further includes electroplating phase change material on exposed portions of the conformal conductive seed layer, recessing the phase change material within the center region forming a conductive material that remains conductive upon oxidation, on the recessed phase change material, oxidizing edges of the conformal conductive seed layer formed along sides of each via, and forming a top electrode over each memory cell.

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