Phase-change memory device with overvoltage protection and...

Details Phase-change memory device with overvoltage protection and... Phase-change memory device with overvoltage protection and...

2006-06-27

2006-06-27

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S158000, C365S189090, C365S210130

Reexamination Certificate

active

07068534

ABSTRACT:
A phase change memory device includes a plurality of phase-change memory cells, arranged in rows and columns, phase-change memory cells arranged on the same column being connected to a same bit line; a plurality of first selectors, each coupled to a respective phase-change memory cell; an addressing circuit for selectively addressing at least one of the bit lines, one of the first selectors, and the phase-change memory cell connected to the addressed bit line and to the addressed first selector; and a regulated voltage supply circuit, selectively connectable to the addressed bit line, for supplying a bit line voltage. The bit line voltage is correlated to a first control voltage on the addressed first selector, coupled to the addressed phase-change memory cell.

REFERENCES:
patent: 6456524 (2002-09-01), Perner et al.
patent: 6608773 (2003-08-01), Lowrey et al.
patent: 6707712 (2004-03-01), Lowery
patent: 1 326 258 (2003-07-01), None
patent: 1 339 066 (2003-08-01), None

Affiliated with

Also associated with

Rating

Phase-change memory device with overvoltage protection and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase-change memory device with overvoltage protection and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-change memory device with overvoltage protection and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3649181