Phase change memory device using multiprogramming method

Details Phase change memory device using multiprogramming method Phase change memory device using multiprogramming method

2007-03-19

2008-12-09

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S214000, C365S230060

Reexamination Certificate

active

07463511

ABSTRACT:
A phase change memory device includes a memory cell array and a write driver circuit, and a column selection circuit. The memory cell array includes a plurality of block units each connected between a corresponding pair of word line drivers. The write driver circuit includes a plurality of write driver units each comprising a plurality of write drivers adapted to provide respective programming currents to a corresponding block unit among the plurality of block units. The column selection circuit is connected between the memory cell array and the write driver circuit and is adapted to select at least one of the plurality of memory blocks in response to a column selection signal to provide corresponding programming currents to the at least one of the plurality of memory blocks.

REFERENCES:
patent: 7304885 (2007-12-01), Cho et al.
patent: 2007/0058425 (2007-03-01), Cho et al.
patent: 2008/0025078 (2008-01-01), Scheuerlein et al.
patent: 2008/0025085 (2008-01-01), Scheuerlein et al.
patent: 2008/0137402 (2008-06-01), Cho et al.

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