Phase-change memory device including biasing circuit

Details Phase-change memory device including biasing circuit Phase-change memory device including biasing circuit

2009-05-18

2011-10-18

Le, Vu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S174000

Reexamination Certificate

active

08040720

ABSTRACT:
A memory cell device is provided which includes a substrate, a plurality of unit memory cells connected between a word line and respective bit lines, where each memory cell including a resistance variable element, such a phase-change element, and a diode connected in series between the word line and the respective bit line, and a biasing circuit which applies a biasing voltage to the substrate to decrease a current flow in the word line.

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