Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-08-30
2011-08-30
Such, Matthew W (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257S004000, C257SE45002, C257SE21090
Reexamination Certificate
active
08008167
ABSTRACT:
A phase change memory device having an increased sensing margin for improved cell efficiency. The phase change memory device includes a plurality of diodes formed in an active region of a semiconductor substrate; an insulation layer pattern formed on the respective diodes; a phase change layer formed on the insulation layer pattern in such a way as not to be electrically connected with the diodes; bit lines formed over the phase change layer; and a global X-decoder line formed over the bit lines. The present invention suppresses current flow in a phase change memory device because the dummy cell string and the dummy active region are not electrically connected with each other under the global X-decoder line, whereby preventing parasitic current from being produced in the phase change memory device.
REFERENCES:
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.
patent: 2009/0052231 (2009-02-01), Kurotsuchi et al.
patent: 2009/0316473 (2009-12-01), Happ et al.
patent: 10-0621774 (2006-09-01), None
patent: 1020080039701 (2008-05-01), None
Harrison Monica D
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Such Matthew W
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