Phase change memory device and write method thereof

Details Phase change memory device and write method thereof Phase change memory device and write method thereof

2009-02-10

2011-11-01

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189140, C365S189160, C365S226000

Reexamination Certificate

active

08050083

ABSTRACT:
A phase change memory device and a write method thereof allow writing of both volatile and non-volatile data on the phase change memory device. The phase change memory device may be written by setting a write mode as one of a volatile write mode and a non-volatile write mode, and writing data as volatile or non-volatile by applying a write pulse corresponding to the write mode, wherein, when power is not supplied to the phase change memory device, the non-volatile data is retained and the volatile data is not retained.

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