Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2005-12-29
2008-12-30
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S203000
Reexamination Certificate
active
07471553
ABSTRACT:
A phase change memory device includes a memory cell having a phase change material, a write driver adapted to supply a program current to the memory cell during a programming interval, and a pump circuit adapted to enhance a current supply capacity of the write driver during the programming interval. The pump circuit is activated prior to the programming interval in response to an external control signal.
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Cho Woo-Yeong
Kang Sang-Beom
Kim Du-Eung
Lee Kwang-Jin
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Yang Han
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