Phase-change memory device and method that maintains the...

Details Phase-change memory device and method that maintains the... Phase-change memory device and method that maintains the...

2007-07-10

2007-07-10

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S113000, C365S163000, C365S186000

Reexamination Certificate

active

10937943

ABSTRACT:
Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a reset state within a constant resistance range. In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell.

REFERENCES:
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6545903 (2003-04-01), Wu
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 2003/0081445 (2003-05-01), Van Brocklin et al.
patent: 2002-203392 (2002-07-01), None
Kang-Deog Suh, et al., “A 3.3V 32Mb NAND Flash Memory With Incremental Step Pulse Programming Scheme”, IEEE International Solid-State Circuits Conference; Digest of Technical Papers, Dec. 30, 1995.

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