Phase-change memory device and method of writing a...

Details Phase-change memory device and method of writing a... Phase-change memory device and method of writing a...

2006-09-19

2006-09-19

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S230060

Reexamination Certificate

active

07110286

ABSTRACT:
A phase-change cell memory device includes a plurality of phase-change memory cells, an address circuit, a write driver, and a write driver control circuit. The phase-change memory cells each include a volume of material that is programmable between amorphous and crystalline states. The address circuit selects at least one of the memory cells, and the write driver generates a reset pulse current to program a memory cell selected by the address circuit into the amorphous state, and a set pulse current to program the memory cell selected by the address circuit into the crystalline state. The write driver control circuit varies at least one of a pulse width and a pulse count of at least one of the reset and set pulse currents according to a load between the write driver and the memory cell selected by the address circuit.

REFERENCES:
patent: 6480438 (2002-11-01), Park
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6937507 (2005-08-01), Chen

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