Phase change memory device and method of programming the same

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S113000

Reexamination Certificate

active

11319284

ABSTRACT:
A phase change memory device includes a memory cell having a phase change material, a write driver which supplies a step-down set current to the memory cell, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit which controls a duration of the step-down set current supplied by the write driver.

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patent: 2005/0068804 (2005-03-01), Choi et al.
patent: 2006/0087876 (2006-04-01), Cho et al.
patent: 2006/0221679 (2006-10-01), Kang et al.
patent: 2003-331574 (2003-11-01), None
patent: 1020050017352 (2005-02-01), None
patent: 10200500898500 (2005-09-01), None
patent: WO 2004/024659 (2004-03-01), None

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