Phase-change memory device and method of manufacturing the same

Details Phase-change memory device and method of manufacturing the same Phase-change memory device and method of manufacturing the same

2011-03-22

2011-03-22

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000

Reexamination Certificate

active

07910398

ABSTRACT:
In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

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