Semiconductor device having improved contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

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Details

C257S738000, C257S748000, C257S784000, C257SE23001

Reexamination Certificate

active

07893544

ABSTRACT:
A device with a solder joint made of a copper contact pad (210) of certain area (202) and an alloy layer (301) metallurgically attached to the copper pad across the pad area. The alloy layer contains copper/tin alloys, which include Cu6Sn5intermetallic compound, and nickel/copper/tin alloys, which include (Ni,Cu)6Sn5intermetallic compound. A solder element (308) including tin is metallurgically attached to the alloy layer across the pad area. No fraction of the original thin nickel layer is left after the reflow process. Copper/tin alloys help to improve the drop test performance, nickel/copper/tin alloys help to improve the life test performance.

REFERENCES:
patent: 6224690 (2001-05-01), Andricacos et al.
patent: 6372540 (2002-04-01), Huemoeller
patent: 6548898 (2003-04-01), Matsuki et al.
patent: 6596621 (2003-07-01), Copeland et al.
patent: 6642079 (2003-11-01), Liu et al.
patent: 6879041 (2005-04-01), Yamamoto et al.
patent: 2003/0096495 (2003-05-01), Ihara et al.
patent: 2003/0121959 (2003-07-01), Yamaguchi et al.
patent: 2003/0143419 (2003-07-01), Nakamura
patent: 2003/0193094 (2003-10-01), Takahashi et al.
patent: 2004/0026769 (2004-02-01), Nakamura
patent: 2004/0099716 (2004-05-01), Yuan et al.
patent: 2004/0155336 (2004-08-01), Yamaguchi et al.
patent: 2005/0161829 (2005-07-01), Zeng
patent: 2005/0275096 (2005-12-01), Zeng et al.
patent: 2006/0267157 (2006-11-01), Edwards et al.
Electronic Packaging and Interconnection Handbook, Charles A Harper, 2000, McGraw-Hill, Third Edition, p. 4.12.
Kazuaki Ano, “High Reliability Solder Joint with Multilayer Structure” U.S. Appl. No. 10/709,147, filed Nov. 12, 2003.

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