Phase-change memory device and method of fabricating the same

Details Phase-change memory device and method of fabricating the same Phase-change memory device and method of fabricating the same

2006-09-29

2009-11-03

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07613037

ABSTRACT:
A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.

REFERENCES:
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6579760 (2003-06-01), Lung
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 10-2004-0083538 (2004-02-01), None
patent: 10-2004-0107487 (2004-12-01), None

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