Phase change memory device and method of driving word line...

Details Phase change memory device and method of driving word line... Phase change memory device and method of driving word line...

2005-12-19

2008-08-26

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S175000, C365S230060

Reexamination Certificate

active

07417887

ABSTRACT:
A method and device for driving the word lines of a phase change memory device is provided. The method may include applying a first voltage level to non-selected word lines and a second voltage level to selected word lines during a normal operational mode, and placing the word lines in a floating state during a standby operational mode. The phase change memory device may include a plurality of word line drive circuits for driving corresponding word lines, where each of the plurality of word line drive circuits includes a drive unit which sets a corresponding word line to a first voltage level or a second voltage level in response to a first control signal, and a mode selector which selectively applies the first voltage level to the driving unit according to an operational mode of the phase change memory device.

REFERENCES:
patent: 6635934 (2003-10-01), Hidaka
patent: 6667900 (2003-12-01), Lowrey et al.
patent: 7092307 (2006-08-01), Chen et al.
patent: 7123535 (2006-10-01), Kurotsuchi et al.
patent: 2003/0002338 (2003-01-01), Xu et al.
patent: 2003/0123284 (2003-07-01), Lowrey et al.
patent: WO 03/058632 (2003-07-01), None

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