Phase change memory device and associated wordline driving...

Details Phase change memory device and associated wordline driving... Phase change memory device and associated wordline driving...

2005-12-29

2009-06-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S230080, C365S230030

Reexamination Certificate

active

07548446

ABSTRACT:
A semiconductor memory device includes a plurality of wordline driving circuits adapted to control the voltage level of a sub-wordline in response to a logic state of a global wordline and an address signal. The wordline driving circuit comprises first and second transistors configured to maintain the sub-wordline at a first voltage level when the global wordline and the address signal have a first logic state and at a second voltage level when the global wordline or the address signal have a second logic state.

REFERENCES:
patent: 6667900 (2003-12-01), Lowrey et al.
patent: 6735104 (2004-05-01), Scheuerlein
patent: 7123535 (2006-10-01), Kurotsuchi et al.
patent: 2004/0027908 (2004-02-01), Ooishi et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2004-110867 (2004-04-01), None

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