Phase-change memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S147000

Reexamination Certificate

active

07450415

ABSTRACT:
A phase-change memory device is provided. The phase-change memory device includes a phase-change memory cell array including a first memory block having a plurality of phase-change memory cells each connected between each of a plurality of bit lines and a first word line, a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and a row driver including a first and a second pull-up transistor pulling-up each voltage level of the first and the second word lines.

REFERENCES:
patent: 6831856 (2004-12-01), Pashmakov
patent: 2005/0030800 (2005-02-01), Johnson et al.
patent: 2005/0128785 (2005-06-01), Kang
patent: 2007/0217254 (2007-09-01), Matsuoka et al.
patent: 2004-185755 (2004-07-01), None
patent: 2004-186553 (2004-07-01), None
patent: 1020030014613 (2003-02-01), None
patent: 10-2004-0074088 (2004-08-01), None
patent: 1020050046401 (2005-05-01), None
patent: 1020050115539 (2005-12-01), None

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