Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2006-12-19
2008-11-11
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S147000
Reexamination Certificate
active
07450415
ABSTRACT:
A phase-change memory device is provided. The phase-change memory device includes a phase-change memory cell array including a first memory block having a plurality of phase-change memory cells each connected between each of a plurality of bit lines and a first word line, a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and a row driver including a first and a second pull-up transistor pulling-up each voltage level of the first and the second word lines.
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Cho Beak-hyung
Cho Woo-yeong
Choi Byung-gil
Kim Du-eung
Lee Chang-soo
Samsung Electronics Co,. Ltd.
Tran Michael T
Volentine & Whitt P.L.L.C.
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