Phase-change memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S296000

Reexamination Certificate

active

07453111

ABSTRACT:
Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.

REFERENCES:
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 6329666 (2001-12-01), Doan et al.
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6569705 (2003-05-01), Chiang et al.
patent: 6586761 (2003-07-01), Lowrey
patent: 6855975 (2005-02-01), Gilton
patent: 7038261 (2006-05-01), Horii
patent: 1020030086820 (2003-11-01), None
patent: 1020050055400 (2005-06-01), None

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