Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-29
2008-11-18
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
07453111
ABSTRACT:
Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.
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Park Ju-Chul
Ryoo Kyung-Chang
Song Se-Ahn
Song Yoon-Jong
Potter Roy K
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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