Phase change memory device

Details Phase change memory device Phase change memory device

2011-03-15

2011-03-15

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S100000

Reexamination Certificate

active

07906773

ABSTRACT:
A semiconductor device includes an insulating layer on a substrate, a first electrode in the insulating layer having a first upper surface and a second upper surface, a second electrode in the insulating layer spaced apart from the first electrode by a first distance and having a third upper surface and a fourth upper surface, the third upper surface being disposed at a substantially same level as the first upper surface, and the fourth upper surface being disposed at a substantially same level as the second upper surface, a first phase change material pattern covering a part of the first upper surface of the first electrode, and a second phase change material pattern covering a part of the third upper surface of the second electrode, wherein an interface region between the second phase change pattern and the second electrode is spaced apart from an interface region between the first phase change pattern and the first electrode by a second distance greater than the first distance.

REFERENCES:
patent: 6621095 (2003-09-01), Chiang et al.
patent: 7229887 (2007-06-01), Dennison
patent: 7307269 (2007-12-01), Kim et al.
patent: 7541252 (2009-06-01), Eun et al.
patent: 7674709 (2010-03-01), Happ
patent: 2007/0108430 (2007-05-01), Lung
patent: 2007/0246440 (2007-10-01), Sato
patent: 2007-288083 (2007-11-01), None
patent: 10-2006-0002134 (2006-01-01), None
patent: 10-0782496 (2007-11-01), None

Affiliated with

Also associated with

Rating

Phase change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2663567