Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2008-10-23
2010-11-30
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S229000, C365S230060
Reexamination Certificate
active
07843720
ABSTRACT:
Disclosed are a phase change memory device in which an active time is reduced and a method of discharging a bitline in the phase change memory device. In the phase change memory device having the reduced active time and the method of discharging the bitline in the phase change memory device, the bitline is either always discharged when the phase change memory device is in standby, is discharged after the active operation of the phase change memory device, or is discharged prior to and after the active operation of the phase change memory device.
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Hwang Sang-ki
Kim Hye-jin
Lam David
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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