Phase change memories and/or methods of programming phase...

Details Phase change memories and/or methods of programming phase... Phase change memories and/or methods of programming phase...

2007-12-04

2007-12-04

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189011, C365S194000

Reexamination Certificate

active

11074557

ABSTRACT:
Phase-change memory devices are provided that include a plurality of phase-change memory cells and a reset pulse generation circuit configured to output a plurality of sequential reset pulses. Each sequential reset pulse is output to a corresponding one of a plurality of reset lines. A plurality of write driver circuits are coupled to corresponding phase change memory cells and to a corresponding one of the reset lines of the reset pulse generation circuit. Methods of programming phase-change memory devices using sequential reset control signals are also provided.

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