Phase change material memory device

Details Phase change material memory device Phase change material memory device

2008-01-15

2008-01-15

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S652000

Reexamination Certificate

active

10020757

ABSTRACT:
A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to subsequent processing steps or the open environment.

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