Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-11-22
2005-11-22
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06967863
ABSTRACT:
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.
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Dinh Son T.
Grandis Inc.
Sawyer Law Group LLP
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