Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-20
2007-02-20
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S239000, C438S257000, C438S972000, C257SE29010, C257SE27155
Reexamination Certificate
active
10875534
ABSTRACT:
The present teachings describe a container capacitor that utilizes an etchant permeable lower electrode for the formation of single or double-sided capacitors without excessive etching back of the periphery of the use of sacrificial spacers. The present teachings further describe a method of forming at least one capacitor structure on a substrate. For example, the method comprises forming at least one recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the at least one recess, and defining at least one lower electrode within the at least one recess formed in the substrate by removing at least a portion of the first conductive layer. The method further comprises diffusing an etchant through the at least one lower electrode so as to remove at least a portion of the substrate to thereby at least partially isolate the at least one lower electrode. The method still further comprises depositing a dielectric layer on the at least one isolated lower electrode and depositing a second conductive layer on the dielectric layer so as to form an upper electrode.
REFERENCES:
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patent: 5480820 (1996-01-01), Roth et al.
patent: 6049101 (2000-04-01), Graettinger et al.
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patent: 2004/0171208 (2004-09-01), Gilton
Patraw Robert D.
Walker Michael A.
Knobbe Martens Olson & Bear LLP
Sarkar Asok K.
Yevsikov Victor V.
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