Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-11-28
2009-12-29
Cao, Phat X (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S762000, C257SE21016
Reexamination Certificate
active
07638439
ABSTRACT:
A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
REFERENCES:
patent: 6291315 (2001-09-01), Nakayama et al.
patent: 2005/0087289 (2005-04-01), Toyoda
patent: 06-084887 (1994-03-01), None
Ezawa Hirokazu
Honda Makoto
Kubota Takeo
Shigeta Atsushi
Yomogihara Kaori
Cao Phat X
Doan Nga
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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