Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1998-04-14
2000-03-21
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 42725518, 42725527, 42725537, 427255394, B05D 306, C23C 1630
Patent
active
060400226
ABSTRACT:
An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.
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Chang Mei
Maydan Dan
Wang David N. K.
White John M.
Applied Materials Inc.
King Roy V.
Morris Birgit
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