Peak-based endpointing for chemical mechanical polishing

Details Peak-based endpointing for chemical mechanical polishing Peak-based endpointing for chemical mechanical polishing

2011-08-16

2011-08-16

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C216S085000, C216S089000, C438S692000, C438S693000, C700S121000

Reexamination Certificate

active

07998358

ABSTRACT:
A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

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Applied Materials, Inc., International Search Report and the Written Opinion of the International Application No. PCT/US2007/083045 dated Apr. 18, 2008, 9 pages.

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