Patterning using wax printing and lift off

Details Patterning using wax printing and lift off Patterning using wax printing and lift off

2007-12-18

2007-12-18

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S313000, C430S311000

Reexamination Certificate

active

10741252

ABSTRACT:
A method for performing a liftoff operation involves printing a liftoff pattern using low-resolution patterning techniques to form fine feature patterns. The resulting feature size is defined by the spacing between printed patterns rather than the printed pattern size. By controlling the cross-sectional profile of the printed liftoff pattern, mask structures may be formed from the liftoff operation having beneficial etch-mask aperture profiles. For example, a multi-layer printed liftoff pattern can be used to create converging aperture profiles in a patterned layer. The patterned layer can then be used as an etch mask, where the converging aperture profiles result in desirable diverging etched features.

REFERENCES:
patent: 6890050 (2005-05-01), Ready et al.
patent: 6972261 (2005-12-01), Wong et al.
patent: 2002/0054197 (2002-05-01), Okada et al.
patent: 2006/0105492 (2006-05-01), Veres et al.
patent: 003635770 (1988-04-01), None

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