Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-03
2006-10-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S219000, C438S405000, C438S407000, C438S524000, C438S526000, C438S528000, C257SE21564, C257SE21563
Reexamination Certificate
active
07115463
ABSTRACT:
The present invention provides a method of fabricating a patterned silicon-on-insulator substrate which includes dual depth SOI regions or both SOI and non-SOI regions within the same substrate. The method of the present invention includes forming a silicon mask having at least one opening on a surface of Si-containing material, recessing the Si-containing material through the at least one opening using an etching process to provide a structure having at least one recess region and a non-recessed region, and forming a first buried insulating region in the non-recessed region and a second buried insulating region in the recessed region. In accordance with the present invention, the first buried insulating region in the non-recessed region is located above the second buried isolation region in the recessed region. A lift-off step can be employed to remove the first buried insulating region and the material that lies above to provide a substrate containing both SOI and non-SOI regions.
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Sadana Devendra K.
Schepis Dominic J.
Steigerwalt Michael D.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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