Patterning method utilizing electron beam resist containing meth

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430942, G03C 500

Patent

active

061176176

ABSTRACT:
A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.

REFERENCES:
patent: 5561026 (1996-10-01), Aoki

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