Patterning method using a photomask

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Reexamination Certificate

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07001711

ABSTRACT:
An isolated light-shielding pattern formed from a light-shielding film region101and a phase shift region102is formed on a transparent substrate100serving as a mask. The phase shift region102has a phase difference with respect to a light-transmitting region of the transparent substrate100. Moreover, the width of the phase shift region102is set such that a light-shielding property of the phase shift region102becomes at least about the same as that of a light-shielding film having the same width.

REFERENCES:
patent: 5354632 (1994-10-01), Dao et al.
patent: 5718829 (1998-02-01), Pierrat
patent: 5733687 (1998-03-01), Tanaka et al.
patent: 5766805 (1998-06-01), Lee et al.
patent: 5824438 (1998-10-01), Choi et al.
patent: 5908718 (1999-06-01), Ishida et al.
patent: 6044007 (2000-03-01), Capodieci
patent: 6083275 (2000-07-01), Heng et al.
patent: 6106979 (2000-08-01), Pierrat
patent: 0 401 795 (1990-12-01), None
patent: 3-11345 (1991-01-01), None
patent: 3-177841 (1991-08-01), None
patent: 5-142751 (1993-06-01), None
patent: 05-333524 (1993-12-01), None
patent: 6-061117 (1994-03-01), None
patent: 7-72612 (1995-03-01), None
patent: 09-034099 (1997-02-01), None
patent: 9-127676 (1997-05-01), None
patent: 9-127677 (1997-05-01), None
patent: 9-329888 (1997-12-01), None
patent: 10-326005 (1998-12-01), None
patent: 2000-105451 (2000-04-01), None
H.Y. Liu et al., “The Application of Alternating Phase-shifting Masks to 140nm Gate Patterning (II): Mask Design and Manufacturing Tolerances”, Proceedings of SPIE, vol. 3334, pp. 2-14, Feb. 1998.
H. Watanabe et al., “Transparent Phase Mask”, The 51th Annual Technical Meeting of the Japan Society of Applied Physics, 27p-ZG-1, p. 490, Sep. 1990.

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