Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1998-03-26
2000-09-12
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
4302701, 430905, 430910, G03F 730, G03F 7004
Patent
active
061176214
ABSTRACT:
A method for patterning a chemically amplified positive resist material comprising a base polymer having acid labile groups which are eliminated by acid, a photoacid generator and an organic solvent, in which the resist material is applied onto a substrate to a uniform thickness so as to form a resist film that is subsequently exposed, baked, then developed with a developer to form a positive pattern is characterized by using as the base polymer a mixture of at least two base polymers having mutually differing acid labile groups or a base polymer having at least two mutually differing acid labile groups on the same molecule and adjusting the types of the mutually differing acid labile groups and their contents within the base polymer such that, when the chemically amplified positive resist material is applied onto a substrate to a uniform thickness so as to form a resist film that is subsequently exposed, baked, then dissolved with a developer, the exposure E1 which results in an average dissolution rate of 100 .ANG./s for 500 .ANG. from the surface of the resist film toward the substrate and the exposure E2 which results in an average dissolution rate of 100 .ANG./s for 1000 .ANG. from the surface of the substrate toward the resist film surface satisfy the relationship: -0.2<(E2-E1)/E2<0.2.
REFERENCES:
patent: 5558976 (1996-09-01), Urano
patent: 5876900 (1999-03-01), Watanabe
patent: 5882844 (1999-03-01), Tsuchiya
Hatakeyama Jun
Nagura Shigehiro
Barreca Nicole
Duda Kathleen
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Patterning method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Patterning method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-94321