Patterned SOI by oxygen implantation and annealing

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer

Reexamination Certificate

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Details

C438S480000, C438S527000, C438S530000, C438S766000, C257S064000, C257S066000

Reexamination Certificate

active

06846727

ABSTRACT:
Methods for forming a patterned SOI region in a Si-containing substrate are provided which has geometries of about 0.25 μm or less. The methods disclose each utilize a patterned dielectric mask that includes at least one opening having a size of about 0.25 μm or less which exposes a portion of a Si-containing substrate. Oxygen ions are implanted through the opening using at least a base ion implantation process which is carried out at an oxygen beam energy of about 120 keV or less and an oxygen dosage of about 4E17 cm−2or less. These conditions minimize erosion of the vertical edges of the patterned dielectric mask and minimize formation of lateral straggles.

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