Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-01-25
2005-01-25
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S480000, C438S527000, C438S530000, C438S766000, C257S064000, C257S066000
Reexamination Certificate
active
06846727
ABSTRACT:
Methods for forming a patterned SOI region in a Si-containing substrate are provided which has geometries of about 0.25 μm or less. The methods disclose each utilize a patterned dielectric mask that includes at least one opening having a size of about 0.25 μm or less which exposes a portion of a Si-containing substrate. Oxygen ions are implanted through the opening using at least a base ion implantation process which is carried out at an oxygen beam energy of about 120 keV or less and an oxygen dosage of about 4E17 cm−2or less. These conditions minimize erosion of the vertical edges of the patterned dielectric mask and minimize formation of lateral straggles.
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Fogel Keith E.
Hakey Mark C.
Holmes Steven J.
Sadana Devendra K.
Shahidi Ghavam G.
Pham Long
Rao Shrinivas H.
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
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