Patterned SOI by oxygen implantation and annealing

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27112, C257SE21320

Reexamination Certificate

active

07317226

ABSTRACT:
Methods for forming a patterned SOI region in a Si-containing substrate is provided which has geometries of about 0.25 μm or less. Specifically, one method includes the steps of: forming a patterned dielectric mask on a surface of a Si-containing substrate, wherein the patterned dielectric mask includes vertical edges that define boundaries for at least one opening which exposes a portion of the Si-containing substrate; implanting oxygen ions through the at least one opening removing the mask and forming a Si layer on at least the exposed surfaces of the Si-containing substrate; and annealing at a temperature of about 1250° C. or above and in an oxidizing ambient so as to form at least one discrete buried oxide region in the Si-containing substrate. In one embodiment, the mask is not removed until after the annealing step; and in another embodiment, the Si-containing layer is formed after annealing and mask removal.

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