Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112, C257SE21320
Reexamination Certificate
active
07317226
ABSTRACT:
Methods for forming a patterned SOI region in a Si-containing substrate is provided which has geometries of about 0.25 μm or less. Specifically, one method includes the steps of: forming a patterned dielectric mask on a surface of a Si-containing substrate, wherein the patterned dielectric mask includes vertical edges that define boundaries for at least one opening which exposes a portion of the Si-containing substrate; implanting oxygen ions through the at least one opening removing the mask and forming a Si layer on at least the exposed surfaces of the Si-containing substrate; and annealing at a temperature of about 1250° C. or above and in an oxidizing ambient so as to form at least one discrete buried oxide region in the Si-containing substrate. In one embodiment, the mask is not removed until after the annealing step; and in another embodiment, the Si-containing layer is formed after annealing and mask removal.
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Fogel Keith E.
Hakey Mark C.
Holmes Steven J.
Sadana Devendra K.
Shahidi Ghavam G.
International Business Machines - Corporation
Kebede Brook
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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