Pattern forming method using contrast enhanced material

Details Pattern forming method using contrast enhanced material Pattern forming method using contrast enhanced material

1987-08-10

1989-07-18

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430141, 430185, 430187, 430299, 430311, 430312, 430327, 430329, G03F 726

Patent

active

048493236

ABSTRACT:
Disclosed is a pattern forming method using contrast enhanced material for enhancing the resolution and contrast when forming patterns in fabrication of semiconductors or the like. This pattern forming method comprises a step of applying a contrast enhanced material for pattern forming on a photoresist, a step of exposing and a step of developing.
The contrast enhanced material is a water-soluble material using a novel diazo compound so that the coefficient A of the contrast may be 10 or more, and when it is combined with g-line exposure to be used in pattern formation, a pattern of 0.5 .mu.m or less may be formed.
The diazo compound may be represented, for example, by ##STR1##

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patent: 2198827 (1940-04-01), Leuch
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patent: 2405523 (1946-08-01), Sease et al.
patent: 2690968 (1954-10-01), Powers
patent: 3591381 (1971-07-01), Gray et al.
patent: 4569897 (1986-02-01), Kalyanaraman

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