Pattern forming method through combined electron beam and light

Details Pattern forming method through combined electron beam and light Pattern forming method through combined electron beam and light

1998-09-24

2000-02-01

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430328, 430330, G03F 738, G03C 500

Patent

active

06020107&

ABSTRACT:
A rough pattern is formed on a chemically amplified resist by light exposing, and a fine pattern is formed by EB exposing. The resist is heated not only after EB exposing but also after light exposing. After this, the resist on which the rough and the fine patterns are formed is developed. As a result of this, diffusion or deactivation of an acid can be suppressed, and dimensional errors can be reduced.

REFERENCES:
patent: 5104772 (1992-04-01), Kobayashi et al.
patent: 5789140 (1998-08-01), Chou et al.
R. Jonckheere et al., "Electron Beam / DUV Intra-Level Mix-And-Match Lithography for Random Logic 0.25.mu.m CMOS", Microelectronic Engineering, 27:231-234 (1995).
F. Benistant et al., "A heavy Ion Implanted Pocket 0.10 .mu.m n-Type Metal-Oxide-Semiconductor Field Effect Transistor With Hybrid Lithography (Electron-Beam/Deep Ultraviolet) and Specific Gate Passivation Process", J. Vac. Sci. Technol. B, 14(6):4051-4054 (1996).

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