Pattern forming method employing electron beam lithography

Details Pattern forming method employing electron beam lithography Pattern forming method employing electron beam lithography

1988-10-31

1990-11-06

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430317, 430942, 430327, 430316, 430323, 430330, 430313, 430318, 156643, G03C 516, G03F 726

Patent

active

049685830

ABSTRACT:
Multilayer resist materials containing a lowermost layer having a high resistance to dry etching and made from polymers or copolymers of haloalkylated aromatic vinyl compound possessing a molecular weight and haloalkylation degree sufficient not to cause charging up therein during electron beam exposure, and pattern forming methods using these materials. According to the present invention, fine resist patterns with a high resistance to dry etching and high accuracy and suitable for the production of semiconductor devices can be produced.

REFERENCES:
patent: 3063872 (1962-11-01), Boldebuck
patent: 4464460 (1984-08-01), Hiraoka et al.
patent: 4599137 (1986-07-01), Akiya
patent: 4657843 (1987-04-01), Fukuyama
J. M. Moran et al., "High resolution, steep profile resist patterns", Journal of Vacuum Science and Technology, vol. 16, No. 6, Nov.-Dec. 1979, pp. 1620-1624.
Y. Sakakibara et al., "Variable-Shaped Electron-Beam Direct Writing Technology for 1-.mu.m, VLSI Fabrication", IEEE Transactions on Electron Devices, vol. ED-28, No. 11, Nov., 1981, pp. 1279-1284.

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